کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9803930 | 1516475 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and electrical characteristics of highly textured oxidation-free Ru thin films by DC magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Textured Ru thin films (â¼120 nm) were deposited on Si and rolling-assisted biaxially textured Ni substrates by a DC magnetron sputtering technique with a two-step process. The biaxially textured pure Ni substrates with a thickness of 80 μm were fabricated by rolling followed by recrystallization. The alignments and the crystallinity of Ru films were analyzed by pole figures, as well as X-ray diffraction (θ â 2θ) analysis. The highly (0 0 2) oriented Ru films were fabricated on Si substrates, and four-fold symmetric Ru films on Ni(2 0 0) substrates. The resistivities of pure metallic Ru films were 20-80 μΩ cm for Ru on Si and 16-40 μΩ cm on Ni, respectively, which is sufficiently low to be used as a buffer layer in superconductor tapes or electrode materials in capacitor dielectrics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 392, Issues 1â2, 19 April 2005, Pages 231-236
Journal: Journal of Alloys and Compounds - Volume 392, Issues 1â2, 19 April 2005, Pages 231-236
نویسندگان
Hu-Yong Tian, Yu Wang, Helen-Lai-Wa Chan, Chung-Loong Choy, Kwang-Soo No,