کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9803986 | 1516476 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
UV and X-ray excited luminescence of Tb3+-doped ZnGa2O4 phosphors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
Terbium-doped zinc gallates with nominal formulae of Zn(1âx)Ga2O4:xTb, ZnGa2O4:xTb and ZnGa(2âx)O4:xTb were prepared by solid-state reaction method, respectively. Only intrinsic UV emission of ZnGa2O4 host is observed in the photoluminescence spectra of Zn(1âx)Ga2O4:xTb samples, while both ZnGa2O4 emission band and Tb3+ characteristic emission lines (5D4-7FJ) are observed in the emission spectra of ZnGa2O4:xTb and ZnGa(2âx)O4:xTb samples. The different luminescent properties of the three types of phosphors are attributed to their different energy transfer rates from the host to the activators. The X-ray excited luminescence of ZnGa(2âx)O4:xTb exhibits much more intensive emission of Tb3+ and completely suppressed emission of ZnGa2O4, showing an efficient energy transfer from the host lattice to the activator under the X-ray excitation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 391, Issues 1â2, 5 April 2005, Pages 202-205
Journal: Journal of Alloys and Compounds - Volume 391, Issues 1â2, 5 April 2005, Pages 202-205
نویسندگان
Zhihua Xu, Yongxiang Li, Zhifu Liu, Dong Wang,