کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9803988 | 1516476 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
NdFeB alloy as a magnetic electrode material for lithium-ion batteries
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
The search for a reliable indicator of state of charge and even the remaining energy of a lithium-ion cell is of great importance for various applications. This study was an exploratory effort to use magnetic susceptibility as the indicator. In this work, for the first time the change of ac susceptibility of cells was in situ monitored during charge-discharge process. A strong permanent magnetic material, NdFeB alloy, was investigated as an anode material for rechargeable lithium batteries. Both original and partially oxidized NdFeB powders were made into electrodes. Structural characterization was performed on the NdFeB electrodes by means of X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis. An alloy (core)-oxide (shell) structure was found for those partially oxidized samples. The electrochemical cycling of cells made of the NdFeB electrodes against lithium was measured. The first lithium intercalation capacity of a treated NdFeB can be up to about 831Â mAh/g, while a rather reversible capacity of up to 352Â mAh/g can be obtained. With a specially designed cell, we were able to monitor in situ the change of relative ac susceptibility during charge and/or discharge steps. A clearly monotonous relationship is found between the ac susceptibility of a cell and its depth-of-discharge (DOD). A mechanism based on skin effect and eddy current change is proposed to explain this susceptibility versus DOD relationship.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 391, Issues 1â2, 5 April 2005, Pages 212-216
Journal: Journal of Alloys and Compounds - Volume 391, Issues 1â2, 5 April 2005, Pages 212-216
نویسندگان
J. Zhang, J.L. Shui, S.L. Zhang, X. Wei, Y.J. Xiang, S. Xie, C.F. Zhu, C.H. Chen,