کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9808677 | 1517354 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and performance analysis of film bulk acoustic wave resonators
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper, a radio frequency reactive sputtering deposition technique for piezoelectric aluminum nitride (AlN) thin film formation on a gold (Au) bottom electrode and its successful application in a film bulk acoustic resonator (FBAR) are investigated. The X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) measurements show that the AlN films were deposited onto an Au bottom electrode with highly c-axis-preferred orientation, well-textured columnar structure with a fairly uniform grain size of approximately 83 nm. The roughness is measured at a root-mean square (RMS) value of 5.4 nm and the average peak to valley of each grain column is 46.3 nm. The FBAR consists of an AlN piezoelectric thin film sandwiched between Au electrodes, all of which lie on a thin low-stress silicon nitride which serves as a support membrane on silicon. The performance of FBAR device exhibits a significant of the series quality factor (Qs), the parallel quality factor (Qp), the effective electromechanical coupling coefficient (keff2), and the bandwidths are 97, 120, 5.1%, and 24 MHz, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 59, Issues 8â9, April 2005, Pages 1012-1016
Journal: Materials Letters - Volume 59, Issues 8â9, April 2005, Pages 1012-1016
نویسندگان
Cheng-Liang Huang, Kok-Wan Tay, Long Wu,