کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9809449 1517710 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Excimer laser induced crystallization of amorphous hydrogenated carbon-germanium films fabricated by plasma CVD
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Excimer laser induced crystallization of amorphous hydrogenated carbon-germanium films fabricated by plasma CVD
چکیده انگلیسی
Excimer laser irradiation was demonstrated to be effective for the crystallization of the semiconducting form (a-S) of amorphous hydrogenated carbon−germanium (a-GeXCY:H) films in contrast to the insulating form (a-I) of these films that were resistant to such a treatment. Electrical conductivity, electron diffraction and Raman spectroscopy were used to characterize non-treated and laser beam treated a-S films. Two separate nanocrystalline phases, germanium and graphite-like, were found in these films after the excimer laser crystallization (ELC). A drastic change in the electrical conductivity mechanism from temperature activated to almost temperature independent was also observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 200, Issues 1–4, 1 October 2005, Pages 222-226
نویسندگان
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