کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9809449 | 1517710 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Excimer laser induced crystallization of amorphous hydrogenated carbon-germanium films fabricated by plasma CVD
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Excimer laser irradiation was demonstrated to be effective for the crystallization of the semiconducting form (a-S) of amorphous hydrogenated carbonâgermanium (a-GeXCY:H) films in contrast to the insulating form (a-I) of these films that were resistant to such a treatment. Electrical conductivity, electron diffraction and Raman spectroscopy were used to characterize non-treated and laser beam treated a-S films. Two separate nanocrystalline phases, germanium and graphite-like, were found in these films after the excimer laser crystallization (ELC). A drastic change in the electrical conductivity mechanism from temperature activated to almost temperature independent was also observed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 200, Issues 1â4, 1 October 2005, Pages 222-226
Journal: Surface and Coatings Technology - Volume 200, Issues 1â4, 1 October 2005, Pages 222-226
نویسندگان
J. Tyczkowski, P. Kazimierski, Y. Hatanaka, T. Aoki,