کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9809483 | 1517710 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth structure of SiOx films deposited on various substrate particles by PECVD in a circulating fluidized bed reactor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Thin SiOx films were deposited on salt and silica gel particles by plasma enhanced chemical vapor deposition (PECVD). A microwave plasma source was integrated in the riser tube of a circulating fluidized bed (CFB) reactor. The CFB reactor provided high deposition rates and good precursor conversion efficiency. The cross-section of the coated particles was analyzed by means of scanning electron microscopy (SEM). The films deposited on smooth salt crystals revealed a dense and coherent film morphology. However, dust particles on the substrate surface caused nodular defects. In contrast on silica gel particles no continuous film could be deposited, but a columnar growth structure was observed. Both growth structures are caused by geometric shadowing effects, which is the dominant growth mechanism at the given deposition conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 200, Issues 1â4, 1 October 2005, Pages 377-381
Journal: Surface and Coatings Technology - Volume 200, Issues 1â4, 1 October 2005, Pages 377-381
نویسندگان
B. Borer, Rudolf von Rohr,