کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9809483 | 1517710 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth structure of SiOx films deposited on various substrate particles by PECVD in a circulating fluidized bed reactor
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth structure of SiOx films deposited on various substrate particles by PECVD in a circulating fluidized bed reactor Growth structure of SiOx films deposited on various substrate particles by PECVD in a circulating fluidized bed reactor](/preview/png/9809483.png)
چکیده انگلیسی
Thin SiOx films were deposited on salt and silica gel particles by plasma enhanced chemical vapor deposition (PECVD). A microwave plasma source was integrated in the riser tube of a circulating fluidized bed (CFB) reactor. The CFB reactor provided high deposition rates and good precursor conversion efficiency. The cross-section of the coated particles was analyzed by means of scanning electron microscopy (SEM). The films deposited on smooth salt crystals revealed a dense and coherent film morphology. However, dust particles on the substrate surface caused nodular defects. In contrast on silica gel particles no continuous film could be deposited, but a columnar growth structure was observed. Both growth structures are caused by geometric shadowing effects, which is the dominant growth mechanism at the given deposition conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 200, Issues 1â4, 1 October 2005, Pages 377-381
Journal: Surface and Coatings Technology - Volume 200, Issues 1â4, 1 October 2005, Pages 377-381
نویسندگان
B. Borer, Rudolf von Rohr,