کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9809850 | 1517717 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Oxidation of BON and Si-DLC thin films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Amorphous boron oxynitrogen (BON) and Si-diamond-like carbon (DLC) thin films were synthesized by the RF plasma-enhanced chemical vapor deposition (RF-PECVD) method, and their oxidation behavior was studied up to 500 °C in air. The oxidation of both films was accompanied by evaporation of volatile species. The oxidation of BON film was preceded by nitrogen escape from the film, and oxygen penetration into the film. The oxidation of Si-DLC film was preceded by carbon escape probably as CO or CO2 from the film, and oxygen penetration into the film. The inwardly transported oxygen simply stayed in the oxidized BON and Si-DLC thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 193, Issues 1â3, 1 April 2005, Pages 288-291
Journal: Surface and Coatings Technology - Volume 193, Issues 1â3, 1 April 2005, Pages 288-291
نویسندگان
J.W. Kim, B. Hong, D.C. Lim, D. B. Lee,