کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817735 | 1518771 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Merits and demerits of light absorbers for ultra-shallow junction formation by green laser annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Ultra-shallow junction formation using an all-solid-state green laser (532Â nm) has been investigated. Considering too large penetration depth of the green laser into Si, a light absorber layer was formed on a Si substrate. TiN or Mo was deposited on Si after Sb+ implantation through the 2-nm screen oxide. The TiN light absorber was effective in reducing the laser energy density to activate dopant but Mo increased the required energy density. Junction depth fundamentally depended on amorphous layer depth, however, the annealing with the absorber easily led to overmelt of c-Si. Mechanisms of these results were discussed utilizing one-dimensional thermal diffusion analysis.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 136-141
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 136-141
نویسندگان
Akira Matsuno, Eisuke Takii, Takanori Eto, Ken-ichi Kurobe, Kentaro Shibahara,