Manufacturability of fully ion implanted planer-doped-barrier diodes in GaAs

Given the superior control of ion implantation over dopant incorporation during epitaxy, in addition to the throughput and hence cost advantages, we have attempted the design and fabrication of a GaAs planar-doped-barrier diode with pre-specified electrical properties, using a fully ion implanted fabrication technology. The process requirements for such a device are the stringent control of both the dopant depth distribution and the absolute dopant activation (simultaneously for both p-type and n-type dopants). In order to achieve a correct device geometry, implants from several MeV down to a few keV are required with an accuracy of better than 1% in both energy and dopant activation. In addition, there is a need to control any dopant redistribution during annealing. Here, we present the results of a model to describe the device performance using the TRIM ion implant simulation code along with experimental results on the doping profiles achieved and the eventual device results obtained from such structures.