کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817766 | 1518771 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of nitrogen-related defects in N-implanted ZnO films by dynamic cathodoluminescence
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Determination of nitrogen-related defects in N-implanted ZnO films by dynamic cathodoluminescence Determination of nitrogen-related defects in N-implanted ZnO films by dynamic cathodoluminescence](/preview/png/9817766.png)
چکیده انگلیسی
Visible bands arising from N-related defects are investigated by dynamic cathodoluminescence (CL) and Gaussian deconvolution. The intensity of the red band increases while that of the ultraviolet (UV) band decreases. The intensity of the yellow band also decreases but only slightly as a function of the electron bombardment cycle. The CL behavior of N-doped ZnO after post-annealing in N2 at high temperature reveals that the N-related defects cannot be easily compensated. The results also confirm the assignment of the N-related defects and are in agreement with the theoretical prediction about Zn-N bonding. Our data provide some clues to the mechanism of the conversion of ZnO into p-type by nitrogen doping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 307-311
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 307-311
نویسندگان
Y.F. Mei, G.G. Siu, Ricky K.Y. Fu, K.W. Wong, Paul K. Chu, C.W. Lai, H.C. Ong,