کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9817770 | 1518771 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization and reduction of a new particle defect mode in sub-0.25 μm semiconductor process flows
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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![عکس صفحه اول مقاله: Characterization and reduction of a new particle defect mode in sub-0.25 μm semiconductor process flows Characterization and reduction of a new particle defect mode in sub-0.25 μm semiconductor process flows](/preview/png/9817770.png)
چکیده انگلیسی
A new particle defect mode has manifested itself with the introduction of sub-0.25 μm process flows. Device structures can now be damaged as a result of collision of high velocity wafers with lower velocity “ambient” particles in the process chamber. This effect has been found in batch implanters where wafers are scanned on a spinning disk or wheel. As feature geometries shrink, yield losses from the ballistic particle collisions increase. The particles may be sourced within the process tool, or brought in on the incoming wafers. It is primarily the motion of the wafer which provides the damaging energy of collision, not the motion of the particle. High scan velocities were thought necessary to achieve implant process uniformity. Avoiding yield loss from these new defect modes requires careful attention to the conceptual and detailed design of the implanter to minimize the likelihood and energy of these collisions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 330-335
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 237, Issues 1â2, August 2005, Pages 330-335
نویسندگان
Leonard Pipes, Mitchell Taylor, Gerard Zietz, Amir Al-Bayati, Matthew Castle, Tony Marin, Jonathon Simmons,