کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818133 | 1518776 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Deuterium trapping near vanadium surface bombarded with hydrogen ions
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Depth profiles of deuterium near surface of a vanadium sample were observed by nuclear reaction analysis. Irradiation defects were introduced in the sample by bombardment of 0.3-MeV H ions with a dose of 3.9Â ÃÂ 1021Â mâ2. During the experiment, the sample was continuously exposed to a rf plasma to be charged with deuterium atoms. The result showed that deuterium trapping sites (traps) were produced by the bombardment and the deuterium concentration increased by several times. The depth profile of trapped deuterium was similar to the distribution of atomic displacement. The traps began to decrease at 470Â K, which agreed with the recovery temperature for point defects. From these results, the traps were considered to be vacancies, probably stabilized by impurity atoms or the irradiation defects. The ratio of the number of the traps to the displaced host atoms was estimated to be 0.026 at lower bombarding doses, which became lower at higher doses.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 327-332
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 232, Issues 1â4, May 2005, Pages 327-332
نویسندگان
I. Takagi, N. Matsubara, M. Akiyoshi, K. Moritani, T. Sasaki, H. Moriyama,