کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9818283 | 1518778 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interaction between implanted fluorine atoms and point defects in preamorphized silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
We have studied, by means of B diffusion analyses, the effect of F on the point defect density in preamorphized Si. Through molecular beam epitaxy (MBE) Si samples containing a special B multi-spike were grown. These samples were amorphized to a depth of 550 nm by implanting Si at liquid nitrogen temperature and then enriched with F at different energies (65-150 keV) and fluences (0.7-5 Ã 1014/cm2). After solid phase epitaxy (SPE) of the samples, we induced, by thermal annealing at 850 °C, the emission of Si self-interstitials (Is) from the end-of-range (EOR) defects. We studied the diffusion of the B spikes, demonstrating that F effectively reduces the B diffusion. This reduction is shown to be caused not by a direct B-F chemical interaction, but by a F interaction with point defects. In particular, F is able to reduce the density of Is, which are responsible for the B diffusion. Still, we showed that F does not appreciably influence the Is emission from the EOR defects, but a local interaction occurs between F atoms and Is after the release of these defects from the EOR region. This interaction results in a consistent reduction of B diffusivity in F enriched regions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 230, Issues 1â4, April 2005, Pages 220-224
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 230, Issues 1â4, April 2005, Pages 220-224
نویسندگان
G. Impellizzeri, J.H.R. dos Santos, S. Mirabella, E. Napolitani, A. Carnera, F. Priolo,