کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9818408 1518780 2005 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Annealing of vacancy complexes in P-doped silicon
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Annealing of vacancy complexes in P-doped silicon
چکیده انگلیسی
In this paper we discuss possible mechanisms of PV and V2 annealing in Si. Our approach includes a combination of density functional theory and lattice kinetic Monte-Carlo (LKMC) simulations. The density functional theory is used to find the binding energies and jump barriers for P-V and V-V pairs at different separations (from one to three interatomic bonds between complex constituents) and in different charge states. The mobility and interaction of vacancies and vacancy complexes is simulated by LKMC with event probabilities calculated based on the energies from ab initio calculations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 228, Issues 1–4, January 2005, Pages 218-225
نویسندگان
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