کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829282 | 1524487 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties of ferroelectric SrBi2Ta2O9-Bi4Ti3O12 thin films derived by the sol-gel method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Properties of ferroelectric SrBi2Ta2O9-Bi4Ti3O12 thin films derived by the sol-gel method Properties of ferroelectric SrBi2Ta2O9-Bi4Ti3O12 thin films derived by the sol-gel method](/preview/png/9829282.png)
چکیده انگلیسی
Ferroelectric (1âx)SrBi2Ta2O9-xBi4Ti3O12(x=0-0.4) thin films were fabricated by the sol-gel method. Multiple phases of SrBi2Ta2O9-Bi3TiTaO9 solid solution, SrBi2Ta2O9 and Bi4Ti3O12 were formed and good electric properties were obtained in the films. With the increase in composition, x, the remnant polarization has no obvious change, but the coercive field increased. The 0.8SBT-0.2BIT films showed the lowest dielectric constant values, well-saturated hysteresis loops and lower leakage current densities. The parameters of the 0.8SBT-0.2BIT film annealed at 750 °C were 150 for dielectric constant, 13.5 μC/cm2 for remanent polarization (2Pr), 152 kV/cm for coercive field (2Ec) and 5.88Ã10â8 A/cm2 (at 200 kV/cm) for leakage current density.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 285, Issues 1â2, 15 November 2005, Pages 103-110
Journal: Journal of Crystal Growth - Volume 285, Issues 1â2, 15 November 2005, Pages 103-110
نویسندگان
Xusheng Wang, Hiroshi Ishiwara,