کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829312 | 1524488 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
ZnO:Zn phosphor thin films prepared by face-to-face annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: ZnO:Zn phosphor thin films prepared by face-to-face annealing ZnO:Zn phosphor thin films prepared by face-to-face annealing](/preview/png/9829312.png)
چکیده انگلیسی
ZnO:Zn phosphor thin films were prepared by face-to-face annealing at 450 °C in air. The effects of the face-to-face annealing on the structural and optical properties of the ZnO films were investigated by X-ray diffraction (XRD), photoluminescence (PL), optical transmittance and absorption measurements. Measurement results showed that the crystal quality of ZnO films was improved by face-to-face annealing. Both UV light emission and visible light emission were enhanced compared to those of open annealing films. The UV emission peak was observed to have a blueshift towards higher energy. The optical band-gap edge of as-annealed films shifted towards longer wavelength.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 284, Issues 3â4, 1 November 2005, Pages 347-352
Journal: Journal of Crystal Growth - Volume 284, Issues 3â4, 1 November 2005, Pages 347-352
نویسندگان
Ruijin Hong, Jianda Shao, Hongbo He, Zhengxiu Fan,