کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829320 | 1524488 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Epitaxial CeO2 buffer layer on deliberately miscut sapphire for microcrack-free thick YBa2Cu3O7âδ films
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Epitaxial CeO2 buffer layer on deliberately miscut sapphire for microcrack-free thick YBa2Cu3O7âδ films Epitaxial CeO2 buffer layer on deliberately miscut sapphire for microcrack-free thick YBa2Cu3O7âδ films](/preview/png/9829320.png)
چکیده انگلیسی
CeO2 buffer layers were grown on deliberately miscut Al2O3(11¯02) surfaces by pulsed laser deposition. Atomic force microscopy observations revealed that their morphology was very smooth. High lattice perfection of the CeO2 layer was shown by X-ray diffraction. Thick YBa2Cu3O7âδ (YBCO) films have been grown on such vicinal surfaces by laser ablation. The resultant YBCO films were stoichiometric and microcrack-free with a porous morphology (confirmed by scanning electron microscopy), consisting of interconnected islands and deep holes (pores). The porous feature is considered as one of the sources contributing to the strain-relieving mechanism responsible for the increase in film thickness without microcracking. Microcrack-free thick YBCO films revealed Tc=90.5±0.5K, Jc(77.3K,0T)=1.5-3.0Ã106A/cm2, and a substantial enhancement of JcÃt(77.3K,0T) up to 246 A/cm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 284, Issues 3â4, 1 November 2005, Pages 417-424
Journal: Journal of Crystal Growth - Volume 284, Issues 3â4, 1 November 2005, Pages 417-424
نویسندگان
J.C. Nie, H. Yamasaki, Y. Nakagawa, K. Develos-Bagarinao, M. Murugesan, H. Obara, Y. Mawatari,