| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 9829352 | 1524489 | 2005 | 8 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Characteristics of sputter-deposited BaTiO3/SrTiO3 artificial superlattice films on an LaNiO3-coated SrTiO3 substrate
												
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																																												کلمات کلیدی
												
											موضوعات مرتبط
												
													مهندسی و علوم پایه
													فیزیک و نجوم
													فیزیک ماده چگال
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												Artificial superlattices consisting of BaTiO3 (BTO) and SrTiO3 (STO) sublayers were epitaxially grown on an LaNiO3-coated SrTiO3 (0 0 1) single-crystal substrate by a triple-gun radio-frequency (RF) magnetron sputtering system. X-ray reflectivity and high-resolution diffraction measurements were employed to characterize the microstructure of these films. Formation of a superlattice structure was confirmed from the appearance of Bragg peaks separated by Kiessig fringes in X-ray reflectivity curves and the (0 0 l) Bragg reflection of X-ray. The clearly discernible main feature and satellite features on both sides of the substrate about the (0 0 2) STO Bragg peak indicate the high quality of the BTO/STO artificial superlattice structure formed on a LaNiO3-coated SrTiO3 substrate. These BTO/STO artificial superlattices show a significant enhancement of dielectric constant relative to BTO and STO single layers of the same thickness. The higher the deposition temperature, the larger the dielectric constant of the films present; the smaller the stacking periodicity of superlattices, the larger the dielectric constant and dielectric loss.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 284, Issues 1â2, 15 October 2005, Pages 65-72
											Journal: Journal of Crystal Growth - Volume 284, Issues 1â2, 15 October 2005, Pages 65-72
نویسندگان
												Hsi-Nao Tsai, Yuan-Chang Liang, Hsin-Yi Lee,