کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829391 | 1524490 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synchrotron X-ray topographic study of dislocations and stacking faults in InAs
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
X-ray diffraction topographs made with synchrotron radiation of an epitaxial InAs structure show images of dislocations and stacking faults. Three types of dislocations are identified and their Burgers vectors are determined from a number of topographs having different diffraction vectors and recorded on the same film at a time. Straight dislocations are found to be edge dislocations and their Burgers vector is ã110ã. Also mixed dislocations are found. The overall dislocation density is about 2000cm-2. Large stacking faults are limited by long straight dislocations, the Burgers vector of which is ã110ã. Only a few threading dislocations are observed in the epitaxial layer grown by vapour-phase epitaxy. Their density is about 500cm-2. Small circular dots found are interpreted as indium-rich inclusions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 283, Issues 3â4, 1 October 2005, Pages 320-327
Journal: Journal of Crystal Growth - Volume 283, Issues 3â4, 1 October 2005, Pages 320-327
نویسندگان
A. Lankinen, T. Tuomi, J. Riikonen, L. Knuuttila, H. Lipsanen, M. Sopanen, A. Danilewsky, P.J. McNally, L. O'Reilly, Y. Zhilyaev, L. Fedorov, H. Sipilä, S. Vaijärvi, R. Simon, D. Lumb, A. Owens,