کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829452 | 1524491 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystal growth of Germanium-based oxide spinels by the Float Zone Method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have succeeded in growing single crystals of the oxide spinels
GeNi2O4 and
GeCo2O4. Both materials have the pyrochlore lattice, and show antiferromagnetic-like order. Thus, magnetic frustrations and relevant phenomena are strongly expected. To obtain single crystals of these materials, we employed a conventional floating-zone method. For the crystal growth of
GeCo2O4, no severe difficulties were found. For
GeNi2O4, it was necessary to avoid intense the evaporation of
GeO2 due to the higher melting point of
GeNi2O4 than that of
GeCo2O4. Therefore, it was quite difficult to obtain single crystals of
GeNi2O4 by the same procedure as
GeCo2O4. We show the importance of the starting composition and crystal growth atmosphere for both spinels.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 283, Issues 1â2, 15 September 2005, Pages 185-192
Journal: Journal of Crystal Growth - Volume 283, Issues 1â2, 15 September 2005, Pages 185-192
نویسندگان
Shigeo Hara, Yoshiyuki Yoshida, Shin-Ichi Ikeda, Naoki Shirakawa, Michael K. Crawford, Kouichi Takase, Yoshiki Takano, Kazuko Sekizawa,