کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9829452 1524491 2005 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystal growth of Germanium-based oxide spinels by the Float Zone Method
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Crystal growth of Germanium-based oxide spinels by the Float Zone Method
چکیده انگلیسی
We have succeeded in growing single crystals of the oxide spinels GeNi2O4 and GeCo2O4. Both materials have the pyrochlore lattice, and show antiferromagnetic-like order. Thus, magnetic frustrations and relevant phenomena are strongly expected. To obtain single crystals of these materials, we employed a conventional floating-zone method. For the crystal growth of GeCo2O4, no severe difficulties were found. For GeNi2O4, it was necessary to avoid intense the evaporation of GeO2 due to the higher melting point of GeNi2O4 than that of GeCo2O4. Therefore, it was quite difficult to obtain single crystals of GeNi2O4 by the same procedure as GeCo2O4. We show the importance of the starting composition and crystal growth atmosphere for both spinels.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 283, Issues 1–2, 15 September 2005, Pages 185-192
نویسندگان
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