کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829576 | 1524494 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Post-annealing of Al-doped ZnO films in hydrogen atmosphere
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Electrical properties of ZnO:Al films deposited on glass substrates by RF magnetron co-sputtering method have been modified by post-deposition annealing treatment in hydrogen atmosphere for potential transparent conductive oxide (TCO) applications. Annealing treatments were carried out at 573 K for compatibility with typical display device fabrication processes and annealing time was varied between 10 and 120 min. Whereas there were no significant changes in crystallinity of the films, resistivity decreased from 4.80Ã10â3 to 8.30Ã10â4 Ω cm and carrier concentration increased from 2.11Ã1020 to 8.86Ã1020 cmâ3 when annealing time was 60 min. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the grain boundary surfaces by the hydrogen annealing treatment. The optical properties of the films, which change in accordance with the Burstein-Moss effect, are consistent with the observed changes in electrical properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 475-480
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 475-480
نویسندگان
Byeong-Yun Oh, Min-Chang Jeong, Doo-Soo Kim, Woong Lee, Jae-Min Myoung,