Growth of SiC-C nanocables on SiO2 films derived by gaseous composition control using Ti

Hexagonal silicon carbide (α-SiC) and amorphous carbon coaxial nanocables were synthesized on silica films that were cobated with nickel (Ni) by flowing a methane (CH4) and hydrogen (H2) mixture in presence of titanium (Ti). Ti powder plays an important role in the growth of the SiC-C nanocables by controlling the gas composition in the growth system. The thickness of the Ni also affects the growth characteristics of SiC-C nanocables. The density of the nanowires was found to be dependent on the relative location of the Ti powder and the substrates. It is possible that Ti decomposes CH4 to form titanium carbide (TiC) and create a high H2 concentration in the system.