کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9829589 1524494 2005 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical conduction studies on Bi2Te3 thin films
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Electrical conduction studies on Bi2Te3 thin films
چکیده انگلیسی
The DC electrical conduction mechanism in vacuum evaporated Al-Bi2Te3-Al thin film sandwich system in the thickness range 350-3300 Å at different temperatures (300-483 K) was found to be Richardson-Schottky type. The samples showed a Log J vs. F1/2 dependence, from which the field lowering coefficient β was evaluated. The height Φ0 of the potential barrier was determined. Variation of activation energy with applied voltages and temperatures was investigated and the results are discussed. From the C-V analysis the flat band potential and the ionized charge density was found to be 2.37 eV and 7.992×1027 cm4, respectively. Hot probe method was employed to identify the type of conduction in these films and are found to be p-type.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issues 2–4, 1 August 2005, Pages 563-570
نویسندگان
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