کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829589 | 1524494 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical conduction studies on Bi2Te3 thin films
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The DC electrical conduction mechanism in vacuum evaporated Al-Bi2Te3-Al thin film sandwich system in the thickness range 350-3300Â Ã
at different temperatures (300-483 K) was found to be Richardson-Schottky type. The samples showed a Log J vs. F1/2 dependence, from which the field lowering coefficient β was evaluated. The height Φ0 of the potential barrier was determined. Variation of activation energy with applied voltages and temperatures was investigated and the results are discussed. From the C-V analysis the flat band potential and the ionized charge density was found to be 2.37 eV and 7.992Ã1027 cm4, respectively. Hot probe method was employed to identify the type of conduction in these films and are found to be p-type.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 563-570
Journal: Journal of Crystal Growth - Volume 281, Issues 2â4, 1 August 2005, Pages 563-570
نویسندگان
R. Sathyamoorthy, J. Dheepa, A. Subbarayan,