کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9829592 1524494 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
High temperature crystallization of NdAl3(BO3)4 and YAl3(BO3)4 doped with Sc3+and Ga3+
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
High temperature crystallization of NdAl3(BO3)4 and YAl3(BO3)4 doped with Sc3+and Ga3+
چکیده انگلیسی
New data on flux growth of mixed crystals of R(Al,M)3(BO3)4, R=Y, Nd, M=Sc, Ga have been obtained. Single crystals were prepared by spontaneous nucleation under different conditions using a K2Mo3O10 based flux. The initial concentration of Sc and Ga doped RAl3(BO3)4 crystalline substance in fluxed melts was varied from 17 to 30 wt%. The average K distribution coefficients were found to be 0.98-0.31 for gallium, but no scandium was found in these materials. Splitting of trigonal prism faces is a specific morphological feature of the crystals grown.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 281, Issues 2–4, 1 August 2005, Pages 587-591
نویسندگان
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