کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829630 | 1524495 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical conductivity and photoreflectance of nanocrystalline copper nitride thin films deposited at low temperature
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nanocrystalline thin films of copper nitride were grown on Si (1Â 0Â 0) wafers at a low substrate temperature by reactive magnetron sputtering of Cu target with the mixture of nitrogen and argon. The influence of nitrogen deficiency upon the structural, optical and electrical properties of as-deposited films was investigated. X-ray diffraction confirms the presence of cubic Cu3N and Cu biphases irrespective of carefully optimized processing parameters. With a Cu content approaching the stoichiometry for Cu3N, the films assume a smooth morphology with densely-packed nanocrystallites of about 40-60Â nm in size. Those deposits containing more than 79% Cu are metallic conductors with excellent electrical conductivity via a percolation mechanism, whereas the slightly substoichiometric Cu3N films show a typical behavior of deficit semiconductor, with an optical gap of about 1.85Â eV as revealed by photoreflectance measurement. All the observations are discussed in terms of nitrogen reemission from the growing film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 490-494
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 490-494
نویسندگان
Y. Du, A.L. Ji, L.B. Ma, Y.Q. Wang, Z.X. Cao,