کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829631 | 1524495 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of nitrogen-doped p-type ZnO films by spray pyrolysis and their electrical and optical properties
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of nitrogen-doped p-type ZnO films by spray pyrolysis and their electrical and optical properties Growth of nitrogen-doped p-type ZnO films by spray pyrolysis and their electrical and optical properties](/preview/png/9829631.png)
چکیده انگلیسی
Nitrogen-doped ZnO films were deposited on silicon (1 0 0) substrate using zinc acetate and ammonium acetate aqueous solution as precursors by ultrasonic spray pyrolysis. Successful p-type doping can be realized at optimized substrate temperature. The p-type ZnO films show excellent electrical properties such as hole concentration of â¼1018 cmâ3, hole mobility of â¼102 cm2 Vâ1 sâ1 and resistivity of â¼10â2 Ω cm. In the photoluminescence measurement, a strong near-band-edge emission was observed, while the deep-level emission was almost undetectable in both undoped and N-doped ZnO films. The growth and doping mechanism of N-doped ZnO films were discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 495-501
Journal: Journal of Crystal Growth - Volume 280, Issues 3â4, 1 July 2005, Pages 495-501
نویسندگان
Jun-Liang Zhao, Xiao-Min Li, Ji-Ming Bian, Wei-Dong Yu, Can-Yun Zhang,