کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829718 | 1524497 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of MIM capacitors with 1000Â Ã
silicon nitride layer deposited by PECVD for InGaP/GaAs HBT applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
For InGaP/GaAs HBT applications, we have developed and characterized MIM capacitors with thin 1000Â Ã
PECVD silicon nitride which were deposited with SiH4/NH3 gas mixing rate, working pressure, and RF power of PECVD at 300 °C. These MIM capacitors had the capacitance density of 600 pF/mm2 with the breakdown electric fields of 3.0â¼7.3 MV/cm. Three PECVD process parameters were designed to lower the refractive index and then lower the deposition rate of silicon nitride films for the high breakdown electric field. At the PECVD process condition of gas mixing rate (0.92), working pressure (1.3 Torr), RF power (53 W), the AFM Rms value of about 1000 Ã
silicon nitride on the bottom metal was the lowest of 0.662Â nm and breakdown electric field was the highest of about 7.3Â MV/cm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 279, Issues 3â4, 1 June 2005, Pages 341-348
Journal: Journal of Crystal Growth - Volume 279, Issues 3â4, 1 June 2005, Pages 341-348
نویسندگان
Soon-Jin So, Doo-Seok Oh, Ho-Kun Sung, Choon-Bae Park,