کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829749 | 1524498 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Directional growth in metal-induced lateral crystallization of amorphous Si under extremely high electric field
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
Metal-induced lateral crystallization of amorphous Si has been investigated under a wide range of electric fields (0-4000 V/cm). In the low field region (<100 V/cm), lateral growth velocity at cathode side was enhanced by applying an electric field. This achieved the formation of poly Si with a large area (â¼50 μm) during low-temperature annealing (525 °C, 25 h). When the electric field exceeded 100 V/cm, the lateral growth velocity decreased with increase in the electric field strength. Under the extremely high electric field (>2000 V/cm), directional growth aligned to the electric field was observed. This new findings will be a powerful tool to achieve new poly Si with highly controlled structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 279, Issues 1â2, 15 May 2005, Pages 1-4
Journal: Journal of Crystal Growth - Volume 279, Issues 1â2, 15 May 2005, Pages 1-4
نویسندگان
Hiroshi Kanno, Atsushi Kenjo, Masanobu Miyao,