Highly ordered germanium nanostructures grown by molecular beam epitaxy on twist-bonded silicon (0Â 0Â 1) substrates

Highly ordered germanium nanostructures are grown by molecular beam epitaxy (MBE) on molecularly bonded silicon (0 0 1) substrates. For high twist-angle-bonded substrates (twist angle as high as 20°), a one-dimensional organization of growth is induced by an interfacial network of mixed tilt dislocations. Depending on growth conditions, we were able to achieve an organized growth of germanium dots, hut islands and wires.