Interface disorder of Zn1−xCdxTe/ZnTe multiple quantum wells grown by MBE using RHEED intensity oscillations

Photoluminescence (PL) line width broadening of Zn1−xCdxTe/ZnTe multiple quantum well (MQW), grown on ZnTe (0 0 1) substrates by molecular beam epitaxy (MBE), has been investigated. During the growth, Cd-composition and thickness of QW are controlled by reflection high energy electron diffraction (RHEED) intensity oscillations. PL line width broadening due to an alloy/interface disorder is calculated and compared with experimental results. The PL line width varies closely related to the exciton radius and shows considerable agreement with theoretical values.