کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829921 | 1524500 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Galvanostatic and potentiostatic deposition of bismuth telluride films from nitric acid solution: effect of chemical and electrochemical parameters
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Composition modulated Bi2Te3 thin films have been deposited onto stainless-steel substrates using a potentiostatic or a galvanostatic process. The deposition potentials and current densities for different bath compositions and concentrations have been estimated from voltamperometric curves. Solutions with two Bi/Te ratios were studied. Only Bi3+ and HTeO2+ solutions in the volumetric proportion of 1:1 with equimolar solution concentrations of 0.01, 0.015 or 0.02Â M allow one to obtain films with an excess or a deficiency of Bi in relation to stoichiometric Bi2Te3 (Bi=40Â at%, Te=60Â at%) by changing the deposition potential or the current density. The structure and the morphology of films have been studied as a function of the electrolyte concentration and the deposition conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 277, Issues 1â4, 15 April 2005, Pages 274-283
Journal: Journal of Crystal Growth - Volume 277, Issues 1â4, 15 April 2005, Pages 274-283
نویسندگان
S. Michel, S. Diliberto, C. Boulanger, N. Stein, J.M. Lecuire,