کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829932 | 1524500 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering Growth of Al-doped ZnO thin films by pulsed DC magnetron sputtering](/preview/png/9829932.png)
چکیده انگلیسی
Transparent and conductive Al-doped zinc oxide (AZO) thin films are deposited on glass substrate by pulsed DC magnetron sputtering and the effect of pulse frequency on the structural, electrical and optical properties of the films are investigated. A highly c-axis-oriented AZO thin film is grown perpendicular to the substrate when a pulse frequency of 30 kHz is applied. Under the optimal growth condition, the AZO thin films exhibited the lowest resistivity value of 7.40Ã10â4 Ω cm and the smoothest surface roughness of Rm=3.25 nm. This indicates that the decreased resistivity of films results from the improvement of crystallinity and surface roughness. The optical transmittance spectra of the films show a very high transmittance of 85-90% in the visible range and exhibit the absorption edge of about 350 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 277, Issues 1â4, 15 April 2005, Pages 352-358
Journal: Journal of Crystal Growth - Volume 277, Issues 1â4, 15 April 2005, Pages 352-358
نویسندگان
Hyungduk Ko, Weon-Pil Tai, Ki-Chul Kim, Sang-Hyeob Kim, Su-Jeong Suh, Young-Sung Kim,