کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9829987 | 1524501 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of InN on sapphire substrate by RF-MBE
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Indium nitride (InN) films were grown on sapphire substrates by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). Atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD) and photoluminescence (PL) spectroscopy were used to characterize the InN films. The results show that the InN films have good crystallinity, with full-width at half-maximum (FWHM) of InN (0Â 0Â 0Â 2) DCXRD peak being 14Â arcmin. At room temperature, a strong PL peak at 0.79Â eV was observed. At 1.9Â eV or so, no peak was observed. In addition, it is found that the InN films grown with low-temperature (LT) InN buffer layer are of better quality than those without LT-InN buffer layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 276, Issues 3â4, 1 April 2005, Pages 401-406
Journal: Journal of Crystal Growth - Volume 276, Issues 3â4, 1 April 2005, Pages 401-406
نویسندگان
Hongling Xiao, Xiaoliang Wang, Junxi Wang, Nanhong Zhang, Hongxin Liu, Yiping Zeng, Jinmin Li, Zhanguo Wang,