کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830057 | 1524502 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sol-gel derived phase pure α-Ga2O3 nanocrystalline thin film and its optical properties
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Sol-gel derived phase pure α-Ga2O3 nanocrystalline thin film and its optical properties Sol-gel derived phase pure α-Ga2O3 nanocrystalline thin film and its optical properties](/preview/png/9830057.png)
چکیده انگلیسی
Single-phase α-Ga2O3 thin films in the nanocrystalline form were prepared by the sol-gel technique. The optimum annealing temperature was found to be 500 °C. Below this temperature, a mixed phase of α-GaO(OH) and α-Ga2O3 was found and above this range a mixed phase of α-Ga2O3 and β-Ga2O3 was detected. A pure β-phase was observed at higher annealing temperatures. The crystallite size of α-Ga2O3 was found to be about 16 nm. The optical band gap of α-Ga2O3, determined from transmittance measurements, was found to be 4.98 eV which was higher than that of the β-phase prepared in identical condition. The semiconducting transition of this phase was allowed direct type like β-phase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 276, Issues 1â2, 15 March 2005, Pages 204-207
Journal: Journal of Crystal Growth - Volume 276, Issues 1â2, 15 March 2005, Pages 204-207
نویسندگان
G. Sinha, K. Adhikary, S. Chaudhuri,