Growth and characteristics of GaNxP1−x alloys by magnetron reactive sputtering on GaN

The growth and characteristics of GaNxP1−x alloys produced using magnetron reactive sputtering on GaN were studied. These GaNP alloys exhibit a mirror-like surface morphology and a flat interface without inclusions. An emission peak in the photoluminescence (PL) was observed in each GaNP alloy spectrum at temperatures between 20 and 120 K. The emission peak for the 20 K PL spectrum was at 714 nm (1.737 eV) with a full-width at half-maximum (FWHM) 28.1 meV. The peak shifted to 719 nm (1.725 eV) as the temperature moved toward 120 K.