کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830173 | 1524504 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Single crystal growth of the Er2PdSi3 intermetallic compound
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Single crystal growth of the Er2PdSi3 intermetallic compound Single crystal growth of the Er2PdSi3 intermetallic compound](/preview/png/9830173.png)
چکیده انگلیسی
Single crystals of the Er2PdSi3 intermetallic compound melting congruently at 1648Â âC, were grown by a floating zone method with radiation heating. The control of oxygen content was the key factor to avoid oxide precipitates, which can affect effective grain selection in the crystal growth process. Crystals grown at velocities of 5Â mm/h with a preferred direction close to (1Â 0Â 0) with inclination angles of about 12â against the rod axis show very distinct facets at the rod surface. The crystals are Pd-depleted and Si-rich with respect to the nominal Er2PdSi3 stoichiometry, but exhibit inferior element segregation. Measurements on oriented single crystalline samples revealed antiferromagnetic ordering below 7Â K, a magnetic easy axis parallel to the (0Â 0Â 1) axis of the AlB2-type hexagonal unit cell, and anisotropic electric properties.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 275, Issues 1â2, 15 February 2005, Pages e103-e107
Journal: Journal of Crystal Growth - Volume 275, Issues 1â2, 15 February 2005, Pages e103-e107
نویسندگان
I. Mazilu, M. Frontzek, W. Löser, G. Behr, A. Teresiak, L. Schultz,