کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9830193 1524504 2005 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The experimental-numerical investigation of instability of faceted Ge doped by Sb growth on the base of AHP method
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
The experimental-numerical investigation of instability of faceted Ge doped by Sb growth on the base of AHP method
چکیده انگلیسی
An antimony-doped germanium single crystal was grown by the Axial Heat Processing (AHP) method from the melt to study the influence of facets on the morphological stability of a solid/liquid interface. It is shown that the faceted portion of the interface remains more stable than the non-faceted portion. In addition, instability of the faceted region occurs at a higher solute concentration with larger cell spacing. A mathematical model, accounting for the presence of facet, predicted the solute profile and morphological features of the grown crystal are in good agreement with the experimental data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 275, Issues 1–2, 15 February 2005, Pages e229-e236
نویسندگان
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