کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830193 | 1524504 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The experimental-numerical investigation of instability of faceted Ge doped by Sb growth on the base of AHP method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
An antimony-doped germanium single crystal was grown by the Axial Heat Processing (AHP) method from the melt to study the influence of facets on the morphological stability of a solid/liquid interface. It is shown that the faceted portion of the interface remains more stable than the non-faceted portion. In addition, instability of the faceted region occurs at a higher solute concentration with larger cell spacing. A mathematical model, accounting for the presence of facet, predicted the solute profile and morphological features of the grown crystal are in good agreement with the experimental data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 275, Issues 1â2, 15 February 2005, Pages e229-e236
Journal: Journal of Crystal Growth - Volume 275, Issues 1â2, 15 February 2005, Pages e229-e236
نویسندگان
Sveta V. Bykova, Vladimir D. Golyshev, Michael A. Gonik, Vladimir B. Tsvetovsky, Ercan Balikci, Andrew Deal, Reza Abbaschian, Marina P. Marchenko, Igor. V. Frjazinov, Vladimir N. Vlasov, Jury A. Serebrjakov,