کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830233 | 1524505 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Properties of transparent conductive ZnO:Al films prepared by co-sputtering
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Properties of transparent conductive ZnO:Al films prepared by co-sputtering Properties of transparent conductive ZnO:Al films prepared by co-sputtering](/preview/png/9830233.png)
چکیده انگلیسی
Al-doped ZnO (ZnO:Al) thin films were grown on glass substrates by co-sputtering at room temperature to explore a possibility of low-cost processing for transparent electrodes. The Al content was controlled by varying Al RF power and the effect of Al contents on the properties of ZnO:Al films was investigated. In X-ray diffraction (XRD), only the (0 0 2) peaks were detected indicating that Al doping did not cause structural degradation of wurtzite ZnO. Atomic force microscopy (AFM) showed that the surfaces of the films became rough with increasing Al contents. The lowest resistivity of 6Ã10â3 Ω cm and the highest carrier concentration of 2Ã1020 cmâ3 were obtained with the Al content of 2.07 wt% while the average transmittance of the visible light was above 90%. Absorption edges of the films initially blueshifted with increasing Al content and then redshifted, which has good correlation with the measured electrical properties. This work demonstrates a potential that transparent electrodes can be produced using a simple low-cost technique.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 274, Issues 3â4, 1 February 2005, Pages 453-457
Journal: Journal of Crystal Growth - Volume 274, Issues 3â4, 1 February 2005, Pages 453-457
نویسندگان
Byeong-Yun Oh, Min-Chang Jeong, Woong Lee, Jae-Min Myoung,