کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830237 | 1524505 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of sputtering power on the properties of ZnO:Ga films deposited by r.f. magnetron-sputtering at low temperature
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Gallium-doped zinc oxide (ZnO:Ga) films were prepared on glass substrates by r.f. magnetron sputtering at low substrate temperature. Structural, electrical and optical properties of the ZnO:Ga films were investigated in terms of the preparation conditions. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (0 0 2) crystallographic direction. The transmittance of the ZnO:Ga films in the visible range was over 85%. The lowest resistivity and sheet resistance for the ZnO:Ga films were about 3.9Ã10â4 Ω cm and 4.6 Ω/â¡, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 274, Issues 3â4, 1 February 2005, Pages 474-479
Journal: Journal of Crystal Growth - Volume 274, Issues 3â4, 1 February 2005, Pages 474-479
نویسندگان
Xuhu Yu, Jin Ma, Feng Ji, Yuheng Wang, Xijian Zhang, Chuanfu Cheng, Honglei Ma,