کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830276 | 1524506 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Crystallization improvement of Ta2O5 thin films by the addition of water vapor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report that by the addition of water vapor into the working gas, crystalline tantalum pentoxide (Ta2O5) thin films can be fabricated at low substrate temperatures. At 500 °C, by the addition of water vapor, the crystallinity of the thin films was obviously improved. The grains with tetragonal structure were clearly observed by AFM. Total transmission greater than 85% was achieved between wavelengths of 400 and 800 nm and the optical absorption edge of the thin films also shifted to smaller wavelength. Our data suggest that the crystallinity of the thin films can be improved and the crystallized temperature can be decreased with the introduction of water vapor in the fabrication process. The effects of water vapor on the crystallization of Ta2O5 thin films are discussed in details.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 274, Issues 1â2, 15 January 2005, Pages 73-77
Journal: Journal of Crystal Growth - Volume 274, Issues 1â2, 15 January 2005, Pages 73-77
نویسندگان
A.P. Huang, Paul K. Chu,