کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9830291 | 1524506 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical properties of W-doped (Ba0.5Sr0.5)TiO3 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ba0.5Sr0.5TiO3 (BST) thin films doped with W were deposited on LaNiO3 (LNO) electrode by RF-magnetron sputtering. The microstructure and electrical properties of BST thin films were studied as a function of W content. W-doped BST films show smoother surface and smaller grain size in comparison with the undoped BST film. With increasing W content, the dielectric constant, tunability, dissipation factor, and leakage current decrease while the figure of merit (FOM) and breakdown strength increase. Doping with the optimal content of 1% W, the BST film has a dielectric constant of 239, a tunability of 30%, a dissipation factor of 0.0066, a FOM value of 45.2, a leakage current density of 16Â nA/cm2, and a breakdown strength of 500Â kV/cm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 274, Issues 1â2, 15 January 2005, Pages 173-177
Journal: Journal of Crystal Growth - Volume 274, Issues 1â2, 15 January 2005, Pages 173-177
نویسندگان
Chun-Sheng Liang, Jenn-Ming Wu,