Preparation and characteristics of nanoporous PLZT ferroelectric thin films prepared via a one-step CSD process

Nanoporous PLZT ferroelectric thin film was grown via a novel 'one-step' CSD process on Pt/Ti/SiO2/Si(1 0 0) substrate. For comparison, dense PLZT thin film was also prepared via a conventional 'two-step' CSD process on the same substrate. The microstructure and electrical properties of both thin films were investigated and compared. Due to different nucleation manners, the nanoporous and conventional films demonstrated random and (1 0 0) orientation, respectively. The nanoporous PLZT had higher remnant polarization than the conventional PLZT thin film because of their different domain structure, and simultaneously held very little dielectric constant because of its high porosity.