کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9837339 | 1525274 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Abrupt metal-insulator transition observed in VO2 thin films induced by a switching voltage pulse
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1Â V enabled the device material to transform efficiently from an insulator to a metal. The characteristics of the transformation were analyzed by considering both the delay time and rise time of the measured current response. The extrapolated switching time of the MIT decreased down to 9Â ns as the external load resistance decreased to zero. Observation of the intrinsic switching time of the MIT in the correlated oxide films is impossible because of the inhomogeneity of the metallic and the insulating states. This indicates that the intrinsic switching time is in the order of less than a nanosecond.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 369, Issues 1â4, 1 December 2005, Pages 76-80
Journal: Physica B: Condensed Matter - Volume 369, Issues 1â4, 1 December 2005, Pages 76-80
نویسندگان
Byung-Gyu Chae, Hyun-Tak Kim, Doo-Hyeb Youn, Kwang-Yong Kang,