Multichannel model of magnetotunneling in disordered electron nanodevices

We present a multichannel model of magnetotunneling transport in unintentionally disordered double-barrier GaAs-AlxGa1-xAs heterostructures. The source of disorder comes from interface roughness at the heterojunctions. Disorder break translational symmetry along the lateral direction and therefore electrons can be scattered off the growth direction. The model correctly describes channel mixing due to these elastic scattering events. The magnetic field applied to the double-barrier heterostructure splits the resonant level into a set of equally-spaced resonances, the level spacing increasing with the magnetic field. We discuss the influence of the various parameters (epilayer widths and magnitude or disorder) on the lineshape of the resonant levels.