کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9837456 | 1525276 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of hydrostatic pressure and applied electric fields on the exciton states in GaAs-(Ga,Al)As quantum wells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of hydrostatic pressure and applied electric fields on the exciton states in GaAs-(Ga,Al)As quantum wells Effects of hydrostatic pressure and applied electric fields on the exciton states in GaAs-(Ga,Al)As quantum wells](/preview/png/9837456.png)
چکیده انگلیسی
The effects of both hydrostatic pressure and electric fields applied perpendicular to the layers on the direct-exciton states in single GaAs-(Ga,Al)As quantum wells are studied. Theoretical calculations are performed within the variational procedure, in the framework of the effective-mass and non-degenerate parabolic-band approximations. Both heavy- and light-hole exciton energies and corresponding quantum-confined Bohr radii are obtained. The pressure coefficient is also theoretically evaluated and found in good agreement with available experimental measurements.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 367, Issues 1â4, 1 October 2005, Pages 267-274
Journal: Physica B: Condensed Matter - Volume 367, Issues 1â4, 1 October 2005, Pages 267-274
نویسندگان
N. Raigoza, C.A. Duque, E. Reyes-Gómez, L.E. Oliveira,