کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9837462 | 1525277 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-field conduction and dielectric study in a-Se78âxTe22Bix alloys
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: High-field conduction and dielectric study in a-Se78âxTe22Bix alloys High-field conduction and dielectric study in a-Se78âxTe22Bix alloys](/preview/png/9837462.png)
چکیده انگلیسی
The present paper reports the measurements on space charge limited conduction (SCLC) in vacuum evaporated amorphous thin films and dielectric relaxation study in bulk of Se78âxTe22Bix where 0⩽x⩽4. At high fields (â¼104 V/cm), the current could be fitted to the theory of SCLC, in case of a uniform distribution of localized states in the mobility gap of these materials. The results indicate an increase in the density of localized states on addition of bismuth (Bi) in the Se78âxTe22Bix system. The value of density of the states N(EF) increases two orders of magnitude at x⩾2. The nature of the capacitances is also changes at x⩾2, i.e. from positive to negative capacitance. This transition at x⩾2 may be explained in terms of a change in conduction from p- to n-type, when the Bi concentration is increased.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 366, Issues 1â4, 1 September 2005, Pages 1-10
Journal: Physica B: Condensed Matter - Volume 366, Issues 1â4, 1 September 2005, Pages 1-10
نویسندگان
M.A. Majeed Khan, M. Zulfequar, M. Husain,