Electrical conductivity and crystallization kinetics of amorphous Se0.81In0.19 films

The change in σ with time during the amorphous-to-crystalline transformation is recorded for Se0.81In0.19 films at different isothermal temperatures in the range 343-373 K. The results indicate that the micro-heterogeneous structures of the films have a remarkable influence on the electrical conductivity during the amorphous-to-crystalline transition. The formal crystallization theory of Avrami has been used to calculate the kinetic parameters of crystallization. The activation energy of the amorphous-to-crystalline transformation is found to be 0.82 and 1.29 eV, respectively, for the two stages of crystallization during the time period of the transformation process.