کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9837584 | 1525280 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of CdSexTe1âx sintered films for photovoltaic applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Polycrystalline thin films of CdSexTe1âx ternary system with variable compositions have been deposited onto highly cleaned glass substrates by sintering process. The optical, structural and electrical properties of CdSexTe1âx sintered thin films have been examined. The optical band gap and optical constants of these films have been determined by using reflection spectra of these films recorded by spectrophotometer (model U-3400) in a wavelength range of 700-880 nm. The crystal structure and composition of CdSexTe1âx ternary system have been determined by X-ray diffraction patterns applying Vigard's law using a Philips X-ray diffractometer with CuKα radiation. The Schottky junction of CdSe0.4Te0.6 with silver (Ag) has been made and barrier height has been determined using current-voltage characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 363, Issues 1â4, 15 June 2005, Pages 102-109
Journal: Physica B: Condensed Matter - Volume 363, Issues 1â4, 15 June 2005, Pages 102-109
نویسندگان
Lokendra Kumar, Beer Pal Singh, Aparna Misra, S.C.K. Misra, T.P. Sharma,