Improved thermoelectric properties due to electronic topological transition under high pressure

It is well documented that the large increase in thermopower in some materials under the action of pressure, could be explained by electronic topological transition (ETT). In this paper, the subject is revisited, with fresh experimental reports establishing pronounced enhancement of the TEP due to ETT. Further, the validity and relevance of certain important criteria for obtaining higher thermoelectric power near ETT is discussed. The possibility of using ETT in designing new materials with the thermoelectric figure of merit higher than 1 is examined.