کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9837962 | 1525287 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dispersion and absorption of Alfven wave in ion-implanted group-IV semiconductor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Dispersion and absorption of Alfven wave in ion-implanted group-IV semiconductor Dispersion and absorption of Alfven wave in ion-implanted group-IV semiconductor](/preview/png/9837962.png)
چکیده انگلیسی
By considering that the implanted ions in a group-IV semiconductor agglomerate to form nanoclusters (NCs) and some of them acquire negative charge, we present an analytical study on excitation and propagation of Alfven wave (AW). Using multi-fluid analysis and Maxwell's equations, a linear dispersion relation for the AW in a semiconductor plasma has been derived. The presence of charged NCs is shown to split the waves into two components and significantly modifying their dispersion and absorption characteristics by creating a charge imbalance in the semiconductor plasma. The NCs, on account of their heavy masses, are assumed to be stationary in the background.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 355, Issues 1â4, 31 January 2005, Pages 37-43
Journal: Physica B: Condensed Matter - Volume 355, Issues 1â4, 31 January 2005, Pages 37-43
نویسندگان
S. Ghosh, Giriraj Sharma, M. Salimullah,